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  • Neuroinformatics
  • 2014-2023
  • 7. Clean energy

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  • image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/
    Authors: Hirono, T.; Barbero, M.; Breugnon, P.; Godiot, S.; +11 Authors

    International audience; Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 k{\Omega}cm that was thinned to 100 {\mu}m. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 10E15neq/cm2, respectively.

    image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/ arXiv.org e-Print Ar...arrow_drop_down
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    http://arxiv.org/pdf/1612.0315...
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    https://doi.org/10.48550/arxiv...
    Article . 2016
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    https://doi.org/10.1109/nssmic...
    Conference object . 2016 . Peer-reviewed
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    Conference object . 2016
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      image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/ arXiv.org e-Print Ar...arrow_drop_down
      image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/
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      http://arxiv.org/pdf/1612.0315...
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      Article . 2016
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      https://doi.org/10.1109/nssmic...
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  • Authors: Francisco Sousa Alves, Luciano; Lefranc, Pierre; Jeannin, Pierre-Olivier; Sarrazin, Benoit;

    Silicon (Si) power devices have dominated the world of Power Electronics in the last years, and they have proven to be efficient in a wide range of applications. But high power, high frequency and high temperature applications require more than Si can deliver. Wide Band-Gap (WBG) materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) were intensively researched and developed for power applications due to the substantial advantages their inherent material properties could realize at device level. The SiC-MOSFET has unique capabilities that make it a superior switch when compared to its silicon counterparts. By nature of its material advantages, SiC MOSFETs provide lower switching loss, lower ON-resistance across its operating temperature range, and superior thermal properties. However the characteristics of SiC devices require consideration of the gate-driver circuit to optimize the switching performance. SiC-MOSFETs, due to their ultra fast switching speed, are susceptible to have harsh transients introduced by rapid change in the drain-to-source voltage. Therefore, the gate drive requirements of SiC-MOSFETs require a thorough analysis in order to prevent high dv/dt transients from causing erratic switching behavior or unnecessary switching loss. This paper provides a general review on the properties of SiC comparing some performances between Si-MOSFETs and SiC-MOSFETs for typical power electronics applications. The main constraints and issues of the SiC-MOSFET switching process are presented, and some recent proposed Gate Drivers to solve these constraints are presented throughout this work.

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  • image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/
    Authors: Sassine, Nahia; Donze, Frédéric-Victor; Bruch, Arnaud; Harthong, Barthelemy;

    Thermal Energy Storage (TES) systems are central elements of various types of power plants operated using renewable energy sources. Packed bed TES can be considered as a cost–effective solution in concentrated solar power plants (CSP). Such a device is made up of a tank filled with a granular bed through which heat-transfer fluid circulates. However, in such devices, the thermal stresses may accumulate from cycle to another due to differential thermal dilatation between filler and tank walls, leading to plastic deformations in the tank shell and the failure of the tank might happen. This paper aims at studying the evolution of tank wall stresses over granular bed thermal cycles, taking into account both thermal and mechanical loads, with a numerical model based on the discrete element method (DEM). Simulations were performed to study two different thermal configurations: (i) the tank is heated homogenously along its height or (ii) with a vertical gradient of temperature. Then, the resulting loading stresses applied on the tank are compared as well the response of the internal granular material.

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    https://doi.org/10.1063/1.5067...
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      image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/ https://aip.scitatio...arrow_drop_down
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  • Authors: Grézaud, Romain; Sibeud, Loic; Lepin, Florent; Willemin, Jerome; +2 Authors

    International audience; To meet severe aeronautic environment constraints, we propose in this paper a versatile 794μW autonomous multi-power-source wireless sensor system interfacing with aeronautic-grade resistive bridge transducers and operating over a wide range of -40°C to +180°C in 180nm HT SOI technology. Compared to previously reported works, it provides robust and versatile 8Sps-1kSps sensor interface and RFID/micro wind turbine power supply scheme.

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  • image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/
    Authors: J. B. Vielfaure; S. D. Vergani; J. Japelj; Johan P. U. Fynbo; +22 Authors

    Context. The identification of the sources that reionized the Universe and their specific contribution to this process are key missing pieces of our knowledge of the early Universe. Faint star-forming galaxies may be the main contributors to the ionizing photon budget during the epoch of reionization, but their escaping photons cannot be detected directly due to inter-galactic medium opacity. Hence, it is essential to characterize the properties of faint galaxies with significant Lyman continuum (LyC) photon leakage up to z ∼ 4 to define indirect indicators allowing analogs to be found at the highest redshift. Aims. Long gamma-ray bursts (LGRBs) typically explode in star-forming regions of faint, star-forming galaxies. Through LGRB afterglow spectroscopy it is possible to detect directly LyC photons. Our aim is to use LGRBs as tools to study LyC leakage from faint, star-forming galaxies at high redshift. Methods. Here we present the observations of LyC emission in the afterglow spectra of GRB 191004B at z = 3.5055, together with those of the other two previously known LyC-leaking LGRB host galaxies (GRB 050908 at z = 3.3467, and GRB 060607A at z = 3.0749), to determine their LyC escape fraction and compare their properties. Results. From the afterglow spectrum of GRB 191004B we determine a neutral hydrogen column density at the LGRB redshift of log(NH I/cm−2) = 17.2 ± 0.15, and negligible extinction (AV = 0.03 ± 0.02 mag). The only metal absorption lines detected are C IV and Si IV. In contrast to GRB 050908 and GRB 060607A, the host galaxy of GRB 191004B displays significant Lyman-alpha (Lyα) emission. From its Lyα emission and the non-detection of Balmer emission lines we constrain its star-formation rate (SFR) to 1 ≤ SFR ≤ 4.7 M⊙ yr−1. We fit the Lyα emission with a shell model and find parameters values consistent with the observed ones. The absolute (relative) LyC escape fractions we find for GRB 191004B, GRB 050908 and GRB 060607A are of 0.35−0.11+0.10 (0.43−0.13+0.12), 0.08−0.04+0.05 (0.08−0.04+0.05) and 0.20−0.05+0.05 (0.45−0.15+0.15), respectively. We compare the LyC escape fraction of LGRBs to the values of other LyC emitters found from the literature, showing that LGRB afterglows can be powerful tools to study LyC escape for faint high-redshift star-forming galaxies. Indeed we could push LyC leakage studies to much higher absolute magnitudes. The host galaxies of the three LGRBs presented here have all M1600 > −19.5 mag, with the GRB 060607A host at M1600 > −16 mag. LGRB hosts may therefore be particularly suitable for exploring the ionizing escape fraction in galaxies that are too faint or distant for conventional techniques. Furthermore, the time involved is minimal compared to galaxy studies. © J.-B. Vielfaure et al. 2020 This work is part of the BEaPro project (PI: S.D. Vergani) funded by the French Agence Nationale de la Recherche (ANR-16-CE31-0003). We thank Giancarlo Ghirlanda for providing useful information. JBV and SDV thank Anne Verhamme for useful discussions. SDV acknowledges financial support from the French Space Agency (CNES). MG was supported by NASA through the NASA Hubble Fellowship grant HST-HF2-51409 and acknowledges support from HST grants HST-GO-15643.017-A, HST-AR-15039.003-A, and XSEDE grant TG-AST180036. The Cosmic DAWN center is funded by the DNRF. JPUF thanks the Carlsberg foundation for support. DBM acknowledges support from VILLUM FONDEN research grant 19054. NRT acknowledges support from STFC via grant ST/N000757/1. DAK acknowledges support from Spanish research project RTI2018-098104-J-I00 (GRBPhot). The PanSTARRS1 Surveys (PS1) and the PS1 public science archive have been made possible through contributions by the Institute for Astronomy, the University of Hawaii, the Pan-STARRS Project O ffice, the Max-Planck Society and its participating institutes, the Max Planck Institute for Astronomy, Heidelberg and the Max Planck Institute for Extraterrestrial Physics, Garching, The Johns Hopkins University, Durham University, the University of Edinburgh, the Queen's University Belfast, the Harvard-Smithsonian Center for Astrophysics, the Las Cumbres Observatory Global Telescope Network Incorporated, the National Central University of Taiwan, the Space Telescope Science Institute, the National Aeronautics and Space Administration under Grant No. NNX08AR22G issued through the Planetary Science Division of the NASA Science Mission Directorate, the National Science Foundation Grant No. AST-1238877, the University of Maryland, Eotvos Lorand University (ELTE), the Los Alamos National Laboratory, and the Gordon and Betty Moore Foundation. This work has made use of data from the European Space Agency (ESA) mission Gaia (https://www.cosmos.esa.int/gaia), processed by the Gaia Data Processing and Analysis Consortium (DPAC, https://www.cosmos.esa.int/web/gaia/dpac/consortium).Funding for the DPAC has been provided by national institutions, in particular the institutions participating in the Gaia Multilateral Agreement. The NumPy (van der Walt et al. 2011), SciPy (Virtanen et al. 2020) and matplotlib (Hunter 2007) packages have been extensively used for the preparation and presentation of this work. Open Access article, published by EDP Sciences, under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Peer reviewed

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      Article . 2020
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      https://doi.org/10.48550/arxiv...
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  • Authors: Perez, Samuel; Cordero Fuertes, Juan Antonio; Coupechoux, Marceau;

    International audience; In large low-power networks of battery-driven sen- sors, power outages are a major concern and communication rates have to be carefully designed in order to optimize energy consumption, network connectivity and sensors lifetime. In some IoT use cases, power can be supplied to sensors by way of renewable energy automatic harvesting (solar panels, etc.). Given the high variability of energy arrival processes, energy consump- tion in sensors, in particular caused by sensor transmissions to the sink, has to be then aligned with energy harvesting patterns, in order to maximize throughput while avoiding power outages that may arise when the battery is empty. This paper proposes ODMAC++, an extension to a well-known protocol for sensor transmission scheduling in a WSN. ODMAC++ relies on learning techniques to adapt sensors communication rate to energy harvesting patterns, and uses a beaconing mechanism for which the frequency is adjusted based on past measurements related to the harvested energy process. Simulations based on analytical energy arrival models and on real solar radiation measurements indicate that ODMAC++ is able to avoid power outages and to cope with battery limitation and energy variations due to variability in time.

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    Authors: Ahmed, Safuriyawu; Le Mouël, Frédéric; Stouls, Nicolas;

    International audience; Pipeline networks dominate the oil and gas mid-stream sector, and although the safest means of transportation for oil and gas products, they are susceptible to failures. These failures are due to manufacturing defects, environmental effects, material degradation, or third party interference through sabotage and vandalism. Internet of Things (IoT)-based solutions are promising to address these by monitoring and predicting failures. However, some challenges remain in the deployment of industrial IoT-based solutions, as the reliability, the robustness, the maintainability, the scalability, the energy consumption, etc. This paper is therefore aimed at highlighting potential solutions for detection and mitigation of pipeline failures while addressing the robustness, the cost and scalability issues of such approach efficiently across the network infrastructure, data and service layers.

    image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/ INRIA a CCSD electro...arrow_drop_down
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    Other literature type . 2020
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    https://doi.org/10.1109/iotsms...
    Conference object . 2020 . Peer-reviewed
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      https://doi.org/10.1109/iotsms...
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  • image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/
    Authors: dahmane, yassir; Adouane, Lounis; Abdrakhmanov, Rustem;

    Abstract In urban zones, vehicles are often subject to multiple starts and stops, due mainly to different traffic conditions which are highly energy consuming. This paper investigates the problem of optimal energy management in a Plug-in Hybrid Electric Bus (PHEB) in urban environment for the purpose of energy consumption minimization. Hereby an original control architecture is proposed which comprises an Adaptive Cruise Control with Stop&Go (ACCwSG) control system and stochastic energy management strategy. To this end, first, an ACCwSG maneuvers has been developed with the aim of maintaining an inter-vehicular distance that ensures safety, as well as providing passenger comfort by generating smooth velocity profiles. Secondly, a Stochastic Model Predictive Control (SMPC) has been developed to optimize PHEB power split. Power demand is addressed as a Markov Decision Process (MDP). To prove the efficiency of the proposed strategy, it is compared with a deterministic rule based method. The obtained results demonstrate the reduction of the energy consumption in average around 13%. The present work is conducted on a dedicated high-fidelity dynamical model of the hybrid bus that was developed on MATLAB/TruckMaker software.

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      Article . 2018 . Peer-reviewed
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  • image/svg+xml Jakob Voss, based on art designer at PLoS, modified by Wikipedia users Nina and Beao Closed Access logo, derived from PLoS Open Access logo. This version with transparent background. http://commons.wikimedia.org/wiki/File:Closed_Access_logo_transparent.svg Jakob Voss, based on art designer at PLoS, modified by Wikipedia users Nina and Beao
    Authors: Torralba Penalver, Encarnacion; López-Tenés, M.; Laborda, E.; Molina, A.;

    Abstract A theoretical study of the IT-CeqC mechanism (ion transfer followed by a chemical equilibrium and a subsequent chemical reaction) is presented at liquid|liquid macrointerfaces by using the double pulse electrochemical techniques reverse pulse voltammetry (RPV), double pulse chronoamperometry and differential double pulse voltammetry (DDPV). These techniques have proven to be very powerful for the characterization and identification of homogeneous kinetics coupled to the charge transfer, with high sensitivity and reduced capacitive and background effects. From the general analytical expressions here deduced, interesting limiting cases and eccentric behaviours are revealed. Methodologies and tools are given for the extraction of the chemical kinetics and thermodynamics on the basis of the analysis of the RPV limiting current, RPV cross potential and DDPV peak potential. The results can be valuable for the investigation of outstanding processes such as the oxygen reduction reaction (ORR) and the hydrogen evolution reaction (HER), the voltammetry of which can be described in a first approach by the IT-CeqC mechanism.

    image/svg+xml Jakob Voss, based on art designer at PLoS, modified by Wikipedia users Nina and Beao Closed Access logo, derived from PLoS Open Access logo. This version with transparent background. http://commons.wikimedia.org/wiki/File:Closed_Access_logo_transparent.svg Jakob Voss, based on art designer at PLoS, modified by Wikipedia users Nina and Beao Electrochimica Actaarrow_drop_down
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    Electrochimica Acta
    Article . 2018 . Peer-reviewed
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    Authors: M'Sirdi, Nk; Naamane, A; Boukara, A; Benabdellatif, M;

    This paper considers the modeling energy consumption of a house with as objective the dimensioning and optimization of renewable energy sources and the energy saving. For the heating needs a house with 4 rooms is modeled and simulated in Matlab/simulink to predict the needed power. The thermal characteristic and model parameters are deduced for the architectural studies and design using architects softwares. We assume that 4 to 5 people live in this house of 100 m\(^{2}\). Despite the question seems classical, for going toward zero energy buildings, it has never been considered scientifically to define a complete set of models and simulations. In this work, we measured the consumption of each one of the house loads to be able to have a corresponding models. Detailed results can be available in an internal report and a PhD report .

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    Other literature type . 2018
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    image/svg+xml Jakob Voss, based on art designer at PLoS, modified by Wikipedia users Nina and Beao Closed Access logo, derived from PLoS Open Access logo. This version with transparent background. http://commons.wikimedia.org/wiki/File:Closed_Access_logo_transparent.svg Jakob Voss, based on art designer at PLoS, modified by Wikipedia users Nina and Beao
    https://doi.org/10.1007/978-98...
    Part of book or chapter of book . 2018 . Peer-reviewed
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      https://doi.org/10.1007/978-98...
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  • image/svg+xml art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos Open Access logo, converted into svg, designed by PLoS. This version with transparent background. http://commons.wikimedia.org/wiki/File:Open_Access_logo_PLoS_white.svg art designer at PLoS, modified by Wikipedia users Nina, Beao, JakobVoss, and AnonMoos http://www.plos.org/
    Authors: Hirono, T.; Barbero, M.; Breugnon, P.; Godiot, S.; +11 Authors

    International audience; Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 k{\Omega}cm that was thinned to 100 {\mu}m. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 10E15neq/cm2, respectively.

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    http://arxiv.org/pdf/1612.0315...
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    https://doi.org/10.48550/arxiv...
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    https://doi.org/10.1109/nssmic...
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  • Authors: Francisco Sousa Alves, Luciano; Lefranc, Pierre; Jeannin, Pierre-Olivier; Sarrazin, Benoit;

    Silicon (Si) power devices have dominated the world of Power Electronics in the last years, and they have proven to be efficient in a wide range of applications. But high power, high frequency and high temperature applications require more than Si can deliver. Wide Band-Gap (WBG) materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) were intensively researched and developed for power applications due to the substantial advantages their inherent material properties could realize at device level. The SiC-MOSFET has unique capabilities that make it a superior switch when compared to its silicon counterparts. By nature of its material advantages, SiC MOSFETs provide lower switching loss, lower ON-resistance across its operating temperature range, and superior thermal properties. However the characteristics of SiC devices require consideration of the gate-driver circuit to optimize the switching performance. SiC-MOSFETs, due to their ultra fast switching speed, are susceptible to have harsh transients introduced by rapid change in the drain-to-source voltage. Therefore, the gate drive requirements of SiC-MOSFETs require a thorough analysis in order to prevent high dv/dt transients from causing erratic switching behavior or unnecessary switching loss. This paper provides a general review on the properties of SiC comparing some performances between Si-MOSFETs and SiC-MOSFETs for typical power electronics applications. The main constraints and issues of the SiC-MOSFET switching process are presented, and some recent proposed Gate Drivers to solve these constraints are presented throughout this work.

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